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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(I) package High collector breakdown voltage VCEO=400V(Min) Excellent switching times : tr=1.0|I s(Max.) tf=1.0|I s(Max.)@ IC=4A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC2555 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB CHA IN PARAMETER Collector-base voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 500 400 7 8 10 4 UNIT V V V A A A Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.5 W 80 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector -emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 400 500 TYP. 2SC2555 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V V 1.0 1.5 100 1.0 |I V V A mA Switching times tr tstg tf Rise time Storage time Fall time IN ANG CH MIC E SE VCCO 200V; IC=4A IB1=-IB2=0.4A RL=50| OND TOR UC 1.0 |I 2.5 1.0 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2555 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2555 CHA IN E SEM NG OND IC TOR UC 4 |
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